The paper describes the effect of doping with hydrogen and tungsten by means of plasma-immersion ion implantation (PIII) on\nthe properties of vanadium dioxide and hydrated vanadium pentoxide films. It is shown that the parameters of the metal-insulator\nphase transition in VO2 thin films depend on the hydrogen implantation dose. Next, we explore the effect of PIII on composition,\noptical properties, and the internal electrochromic effect (IECE) in V2O5�nH2O films. The variations in the composition and\nstructure caused by the hydrogen insertion, as well as those caused by the electrochromic effect, are studied by nuclear magnetic\nresonance, thermogravimetry, Raman spectroscopy, and X-ray structural analysis. It is shown that the ion implantation-induced\nhydrogenation can substantially enhance the manifestation and performance of the IECE in V2O5 xerogel films. Finally, the effect\nof PIII-assisted doping with W on the parameters of electrical switching in Au/V2O5�nH2O/Au sandwich structures is examined.\nIt is shown that implanting small tungsten doses improves the switching parameters after forming. When implanting large doses,\nswitching is observed without electro forming, and if electro forming is applied, the switching effect, on the contrary, disappears.
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